Fundamentals of Modern VLSI Devices

Yuan Taur (University of California, San Diego), Tak H. Ning

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Hardback

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English

Cambridge University Press
02 December 2021

Condensed matter physics (liquid state & solid state physics); Transistors; Semi-conductors & super-conductors

A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.

By: Yuan Taur (University of California San Diego), Tak H. Ning
Imprint: Cambridge University Press
Country of Publication: United Kingdom
Edition: 3rd Revised edition
Dimensions: Height: 250mm, Width: 173mm, Spine: 32mm
Weight: 1.330kg
ISBN: 9781108480024
ISBN 10: 1108480020
Pages: 622
Publication Date: 02 December 2021
Audience: Professional and scholarly , College/higher education , Undergraduate , Primary
Format: Hardback
Publisher's Status: Active

Yuan Taur is a Distinguished Professor of Electrical and Computer Engineering at the University of California, San Diego, having previously worked at IBM's T. J. Watson Research Center, New York. He is an IEEE Fellow. Tak H. Ning is an IBM Fellow (Retired) at the T. J. Watson Research Center, New York. He is a Fellow of the IEEE and the American Physical Society, and a member of the US National Academy of Engineering.