Nanowire Field Effect Transistors

Principles and Applications

Dae Mann Kim, Yoon-Ha Jeong

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English

Springer-Verlag New York Inc.
23 August 2016

Nanotechnology; Transistors

Summary
Details

“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET.

During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes.

Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

Edited by: Dae Mann Kim, Yoon-Ha Jeong
Imprint: Springer-Verlag New York Inc.
Country of Publication: United States
Edition: Softcover reprint of the original 1st ed. 2014
Dimensions: Height: 235mm, Width: 155mm, Spine: 16mm
Weight: 4.511kg
ISBN: 9781493945726
ISBN 10: 1493945726
Pages: 290
Publication Date: 23 August 2016
Audience: Professional and scholarly , Undergraduate
Format: Paperback
Publisher's Status: Active