This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
By:
Yue Hao, Jin Feng Zhang, Jin Cheng Zhang Imprint: CRC Press Country of Publication: United Kingdom Dimensions:
Height: 254mm,
Width: 178mm,
Weight: 771g ISBN:9780367574369 ISBN 10: 0367574365 Pages: 392 Publication Date:30 June 2020 Audience:
College/higher education
,
Professional and scholarly
,
Further / Higher Education
,
Undergraduate
Format:Paperback Publisher's Status: Active
Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.