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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Yue Hao Jin Feng Zhang Jin Cheng Zhang

$94.99

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English
CRC Press
30 June 2020
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

By:   , ,
Imprint:   CRC Press
Country of Publication:   United Kingdom
Dimensions:   Height: 254mm,  Width: 178mm, 
Weight:   771g
ISBN:   9780367574369
ISBN 10:   0367574365
Pages:   392
Publication Date:  
Audience:   College/higher education ,  Professional and scholarly ,  Further / Higher Education ,  Undergraduate
Format:   Paperback
Publisher's Status:   Active

Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.

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