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High k Gate Dielectrics

Michel Houssa

$504

Hardback

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English
Institute of Physics Publishing
01 December 2003
This book reviews the state-of-the-art in high permittivity gate dielectric research. Consisting of contributions from reseachers from Europe and the USA, the first chapter describes the various deposition techniques used for construction of layers at these dimensions. The second chapter considers characterisation techniques of the physical, chemical, structural and electronic properties of these materials. The third chapter reviews the theoretical work done in the field, and the final section is devoted to technological applications.

Edited by:  
Imprint:   Institute of Physics Publishing
Country of Publication:   United Kingdom
Dimensions:   Height: 234mm,  Width: 156mm,  Spine: 38mm
Weight:   1.179kg
ISBN:   9780750309066
ISBN 10:   0750309067
Pages:   614
Publication Date:  
Audience:   Professional and scholarly ,  Undergraduate
Format:   Hardback
Publisher's Status:   Active

Michel Houssa Laboratoire Materiaux et Microelectronique de Provence, Universite de Provence, France Silicon Processing and Device Technology Division, IMEC, Belgium

Reviews for High k Gate Dielectrics

High-K Gate Dielectrics is a timely review of this rapidly evolving research field. The individual chapters provide a complete, in-depth coverage of current understanding, making the book an excellent source of reference for researchers in High-K gate dielectrics and newcomers to the field. The impressive work and methods should make the book of interest for a readership beyond those immediately involved in high-k gate dielectric research. I recommend the book as a very good reference source and overview to researchers with interest in high-k gate dielectrics. -Susanne Stemmer, Materials Today, September 2004


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