The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be required, making this is a subject of intensive research activity within the microelectronics community.
High k Gate Dielectrics reviews the state-of-the-art in high permittivity gate dielectric research. Consisting of contributions from leading researchers from Europe and the USA, the book first describes the various deposition techniques used for construction of layers at these dimensions. It then considers characterization techniques of the physical, chemical, structural, and electronic properties of these materials. The book also reviews the theoretical work done in the field and concludes with technological applications.
Edited by:
Michel Houssa
Imprint: CRC Press
Country of Publication: United Kingdom
Dimensions:
Height: 234mm,
Width: 156mm,
Weight: 453g
ISBN: 9780367454449
ISBN 10: 0367454440
Pages: 614
Publication Date: 18 December 2020
Audience:
Professional and scholarly
,
Undergraduate
Format: Paperback
Publisher's Status: Active
Introduction The need for high-k gate dielectrics and materials requirement Deposition techniques ALCVD, MOCVD, PLD, MBE Characterization Physico-chemical characterization X-ray and electron spectroscopies Oxygen diffusion and thermal stability Defect characterization by ESR Band alignment determined by photo-injection Electrical characteristics Theory of defects in high-k materials Bonding constraints and defect formation at Si/high-k interfaces Band alignment calculations Electron mobility at the Si/high-k interface Model for defect generation during electrical stress Technological aspects Device integration issues Device concepts for sub-100 nm CMOS technologies Transistor characteristics Nonvolatile memories based on high-k ferroelectric layers
Michel Houssa Laboratoire Materiaux et Microelectronique de Provence, Universite de Provence, France Silicon Processing and Device Technology Division, IMEC, Belgium