Ultra-Sensitive PIN and Avalanche Photodiode Receivers

Preface Author biography Symbol 1 Motivation 1.1 PIN-photodiode and APD receivers 1.2 SPAD receivers 1.3 Quantum image sensors 1.4 The principle of ultra-sensitive PIN and avalanche photodiode receivers References 2 Basics of photodiodes 2.1 Optical absorption and photogeneration 2.2 Drift and diffusion 2.3 Width of space-charge region and capacitance 2.4 Impact ionisation 2.5 Breakdown voltage References 3 Basics of noise and sensitivity 3.1 Thermal noise 3.2 Shot noise 3.3 1/f Noise 3.4 Noise in field-effect transistors 3.5 Noise of PIN-FET receiver 3.6 Sensitivity 3.7 TIA noise 3.8 Noise bandwidth 3.9 Noise of integrator 3.10 Excess noise of APDs 3.11 Photon noise 3.12 Reset noise References 4 Basics of optical receivers 4.1 Resistive-feedback transimpedance amplifiers 4.2 Current amplifiers 4.3 Integrating optical receivers References 5 Low-capacitance photodiodes 5.1 PIN photodiodes—a predictive insight 5.2 PIN photodiodes in 0.18 μm CMOS 5.3 Avalanche photodiodes 5.4 Multi-dot photodiodes for large photosensitive areas 5.5 Isolation of circuits References 6 Ultra-sensitive PIN photodiode receivers 6.1 Inverter integrator in 0.35 μm CMOS 6.2 Integrator with common-source amplifier in 0.35 μm CMOS 6.3 Inverter integrator in 0.18 μm CMOS 6.4 Integrator with common-source amplifier in 0.18 μm CMOS 6.5 Reset-less integrating receiver 6.6 Reset-less integrating receiver with punch-through device References 7 Ultra-sensitive avalanche photodiode receivers 7.1 Three-inverter TIA with resistive feedback 7.2 Three-inverter TIA with negative capacitance and resistive feedback 7.3 Integrating APD receivers References 8 Summary and completion 8.1 Recapitulation 8.2 Comparison References