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Tunneling Field Effect Transistor Technology

Lining Zhang Mansun Chan

$214.95   $172.08

Hardback

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English
Springer International Publishing AG
15 April 2016
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs).  Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.
Edited by:   ,
Imprint:   Springer International Publishing AG
Country of Publication:   Switzerland
Edition:   1st ed. 2016
Dimensions:   Height: 235mm,  Width: 155mm,  Spine: 14mm
Weight:   4.616kg
ISBN:   9783319316512
ISBN 10:   3319316516
Pages:   213
Publication Date:  
Audience:   Professional and scholarly ,  Undergraduate
Format:   Hardback
Publisher's Status:   Active
Steep Slope Devices and TFETs.- Tunnel-FET Fabrication and Characterization.- Compact Models of TFETs.- Challenges and Designs of TFET for Digital Applications.- Atomistic Simulations of Tunneling FETs.- Quantum Transport Simulation of III-V TFETs with Reduced-Order k ·p Method.- Carbon Nanotube TFETs: Structure Optimization with Numerical Simulation.

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