This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.
Edited by:
Lining Zhang, Mansun Chan Imprint: Springer International Publishing AG Country of Publication: Switzerland Edition: 1st ed. 2016 Dimensions:
Height: 235mm,
Width: 155mm,
Spine: 14mm
Weight: 4.616kg ISBN:9783319316512 ISBN 10: 3319316516 Pages: 213 Publication Date:15 April 2016 Audience:
Professional and scholarly
,
Undergraduate
Format:Hardback Publisher's Status: Active
Steep Slope Devices and TFETs.- Tunnel-FET Fabrication and Characterization.- Compact Models of TFETs.- Challenges and Designs of TFET for Digital Applications.- Atomistic Simulations of Tunneling FETs.- Quantum Transport Simulation of III-V TFETs with Reduced-Order k ·p Method.- Carbon Nanotube TFETs: Structure Optimization with Numerical Simulation.