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Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect

Jie Cheng

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English
Springer Verlag, Singapore
30 January 2019
Series: Springer Theses
This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.
By:  
Imprint:   Springer Verlag, Singapore
Country of Publication:   Singapore
Edition:   Softcover reprint of the original 1st ed. 2018
Dimensions:   Height: 235mm,  Width: 155mm, 
Weight:   454g
ISBN:   9789811355851
ISBN 10:   9811355851
Series:   Springer Theses
Pages:   137
Publication Date:  
Audience:   Professional and scholarly ,  Undergraduate
Format:   Paperback
Publisher's Status:   Active
Introduction.- Material Removal Mechanism of Cu in KIO4-based Slurry.- Material Removal Mechanism of Ru in KIO4-based Slurry.- Tribocorrosion Investigations of Cu/Ru Interconnect Structure during CMP.- Micro-galvanic Corrosion of Cu/Ru Couple in KIO4 Solution.- Galvanic Corrosion Inhibitors for Cu/Ru Couple During Chemical Mechanical Polishing of Ru.- Synergetic Effect of Potassium Molybdate and Benzotriazole on the CMP of Ru and Cu in KIO4-based Slurry.- Conclusions and Recommendations.

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