Ion Implantation for High-Efficiency Silicon Solar Cells.

Ralph Müller, Fraunhofer ISE, Freiburg

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English

Fraunhofer Verlag
13 January 2017

Alternative & renewable energy sources & technology; Environmental science, engineering & technology; Other technologies & applied sciences

Series: Solare Energie- Und Systemforschung

Summary
Details

The profitability of the whole photovoltaic system can be effectively increased by the use of advanced silicon solar cells with a higher conversion efficiency potential and new technologies are needed to keep the fabrication effort low. Ion implantation allows for single side and even patterned doping of silicon wafers, so this technique could help to simplify the process chain of complex high-efficiency silicon solar cells. In this thesis, the suitability of ion implantation for the fabrication of modern solar cells was investigated. The implantation of mass-separated boron or phosphorus ions and subsequent furnace annealing was used to study the charge carrier recombination due to implantation defects and obtain doping profiles for an evaluation at the device level. Furthermore, novel process sequences combining ion implantation and furnace diffusion for the simplified doping of back-junction back-contact cells were developed and evaluated with respect to the influence of a reverse breakdown and a weak front-side doping on the solar cell performance.

By: Ralph Müller
Edited by: Fraunhofer ISE Freiburg
Imprint: Fraunhofer Verlag
Country of Publication: Germany
Dimensions: Height: 210mm, Width: 148mm, Spine: 13mm
Weight: 299g
ISBN: 9783839610749
ISBN 10: 3839610745
Series: Solare Energie- Und Systemforschung
Pages: 246
Publication Date: 13 January 2017
Audience: Professional and scholarly , Undergraduate
Format: Paperback
Publisher's Status: Active