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GaN-Based Tri-Gate High Electron Mobility Transistors. by Erdin Ture at Abbey's Bookshop,
GaN-Based Tri-Gate High Electron Mobility Transistors.
— —
Erdin Ture Fraunhofer IAF, Freiburg

GaN-Based Tri-Gate High Electron Mobility Transistors.

Erdin Ture,  Fraunhofer IAF, Freiburg

$217.95   $174.72

Paperback

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English
Fraunhofer Verlag
18 May 2018
Circuits & components; Transistors; Semi-conductors & super-conductors; Microwave technology
Series: Science for systems
The rapidly-growing data throughput rates in a wide range of wireless communication applications are pushing the established semiconductor device technologies to their limits. Considerably higher levels of solid-state output power will therefore be needed to meet the demand in the next generation satellite communications as well as the RADAR systems. Owing to their superior material properties such as high breakdown fields and peak electron velocities, GaN-based high electron mobility transistors (HEMTs) have recently prevailed in high-power systems operating in the microwave frequency bands. On the other hand at the millimetre-wave (MMW) and sub-MMW frequencies, highly-scaled GaN HEMTs are prone to experiencing deteriorated high frequency characteristics which severely limit the high-power performance. In an attempt to overcome this, 3-dimensional GaN HEMT devices featuring the Tri-gate topology are developed in this work, exhibiting enhanced performance in terms of both off- and on-state figures of merit. The demonstrated results promote the great potential of Tri-gate GaN HEMTs for both MMW power amplifier and high-speed logic applications.
By:  
Edited by:  
Imprint:   Fraunhofer Verlag
Country of Publication:   Germany
Volume:   35
Dimensions:   Height: 210mm,  Width: 148mm,  Spine: 9mm
Weight:   209g
ISBN:   9783839613412
ISBN 10:   3839613418
Series:   Science for systems
Pages:   169
Publication Date:  
Audience:   Professional and scholarly ,  Undergraduate
Format:   Paperback
Publisher's Status:   Inactive

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