Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
By:
Amit Chaudhry Imprint: Springer-Verlag New York Inc. Country of Publication: United States Edition: 2013 ed. Dimensions:
Height: 235mm,
Width: 155mm,
Spine: 18mm
Weight: 4.498kg ISBN:9781461468219 ISBN 10: 1461468213 Pages: 201 Publication Date:23 April 2013 Audience:
College/higher education
,
Professional and scholarly
,
Further / Higher Education
,
Undergraduate
Format:Hardback Publisher's Status: Active