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Fundamentals of Nanoscaled Field Effect Transistors

Amit Chaudhry

$251.95   $201.58

Paperback

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English
Springer-Verlag New York Inc.
23 August 2016
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
By:  
Imprint:   Springer-Verlag New York Inc.
Country of Publication:   United States [Currently unable to ship to USA: see Shipping Info]
Edition:   Softcover reprint of the original 1st ed. 2013
Dimensions:   Height: 235mm,  Width: 155mm,  Spine: 12mm
Weight:   3.343kg
ISBN:   9781493944828
ISBN 10:   1493944827
Pages:   201
Publication Date:  
Audience:   Professional and scholarly ,  Undergraduate
Format:   Paperback
Publisher's Status:   Active

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