Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
By:
Amit Chaudhry Imprint: Springer-Verlag New York Inc. Country of Publication: United States [Currently unable to ship to USA: see Shipping Info] Edition: Softcover reprint of the original 1st ed. 2013 Dimensions:
Height: 235mm,
Width: 155mm,
Spine: 12mm
Weight: 3.343kg ISBN:9781493944828 ISBN 10: 1493944827 Pages: 201 Publication Date:23 August 2016 Audience:
Professional and scholarly
,
Undergraduate
Format:Paperback Publisher's Status: Active