Field-Effect Transistors Technology: From Sustainability to Next-Generation VLSI Design

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Ashish Raman (Dr B R Ambedkar Nat. Institute of Tech. India) Prabhat Singh

Field-Effect Transistors Technology

From Sustainability to Next-Generation VLSI Design

Ashish Raman (Dr B R Ambedkar Nat. Institute of Tech. India), Prabhat Singh, Naveen Kumar , Sarabdeep Singh

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English

CRC Press
08 December 2025

Instruments & instrumentation engineering; Nanotechnology; Electrical engineering; Electronic devices & materials; Microwave technology

The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.

Features

Highlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies. Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design. Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs. Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors.

The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology.

Edited by: Ashish Raman (Dr B R Ambedkar Nat. Institute of Tech. India), Prabhat Singh, Naveen Kumar, Sarabdeep Singh
Imprint: CRC Press
Country of Publication: United Kingdom
Dimensions: Height: 234mm, Width: 156mm,
ISBN: 9781032876078
ISBN 10: 1032876077
Pages: 466
Publication Date: 08 December 2025
Audience: College/higher education , Professional and scholarly , Primary , Undergraduate
Format: Hardback
Publisher's Status: Forthcoming

Ashish Raman works as an associate professor, in the Department of Electronics and Communication Engineering, at Dr. B R Ambedkar National Institute of Technology Jalandhar Punjab, India. His main areas of interest are electronic devices and circuits, device modeling, device design and simulation, MEMS, and high-power devices. He has contributed research articles/papers to SCI, Scopus, and other reputed journals like IEEE Transactions of Electron Devices, IEEE Transactions on Nanotechnology, Elsevier, and Springer journals, and at international conferences. He is a member of the IEEE Electron Devices Society, the IEEE Solid-State Circuits Society, and the Institution of Engineers Society, India. Prabhat Singh has been a Postdoctoral Fellow scholar, in the School of Electrical and Computer Sciences, at Indian Institute of Technology, Bhubaneswar, Odisha, India. His expertise is in cryogenic CMOS, solid-state devices, analog complementary metal oxide semiconductor (CMOS) integrated circuits, nanoscale device design, and simulation. He has contributed research articles/papers to SCI, Scopus, and reputed journals. Naveen Kumar is a post-doctoral research associate, in the Device Modelling Group, James Watt School of Engineering, at the University of Glasgow, United Kingdom. His research revolves around different semiconductor devices including ultra-scale FETs, solar cells, photodiodes, HEMT, and quantum dots, and their prospective applications. He has authored/co-authored more than 35 research articles/ papers in reputed international journals and conference proceedings. His main areas of research interest include semiconductor device physics, MEMS/NEMS, and spintronics. Sarabdeep Singh is currently working as an assistant professor, in the Department of Electronics and Communications Engineering, at Model Institute of Engineering and Technology, Jammu, India. His current research interests are microelectronics, sensors, and semiconductor devices focusing on Nanowire FETs, IMOS FETs, and Negative-Capacitance FETs. He has, to his credit, over twenty research papers published in national and international journals.