FeFET Devices, Trends, Technology and Applications is essential for anyone seeking an in-depth understanding of the latest advancements in ferroelectric devices, as it offers comprehensive insights into research techniques, novel materials, and the historical context of semiconductor development.
This book serves as an encyclopedia of knowledge for state-of-the-art research techniques for the miniaturization of ferroelectric devices. This volume explores characteristics, novel materials used, modifications in device structure, and advancements in model FET devices. Though many devices following Moore’s Law and More-Moore are proposed, a complete history of existing and proposed semiconductor devices is now available here. This resource focuses on developments and research in emerging ferroelectric FET devices and their applications, providing unique coverage of topics covering recent advancements and novel concepts in the field of miniaturized ferroelectric devices.
Preface xi Acknowledgements xix 1 Scaling and Challenge of Si-Based CMOS: Past, Present, and Future 1 Shiromani Balmukund Rahi and Young Suh Song 1.1 Introduction to Si-Based CMOS Technology 2 1.2 Basic Concept of Transistor Scaling 3 1.3 Past Challenges in Scaling Si-Based CMOS 5 1.4 Present Challenges and Limitations of Si-Based CMOS 7 1.5 Representative Methods for Scaling MOSFET 8 1.6 Future Prospects and Innovations in Si-Based CMOS Technology 10 1.7 Navigating the Evolution of Si-Based CMOS Technology 10 1.8 The Future of Transistors: 2D FET 12 1.9 Conclusion 14 2 Ferroelectric Polymer-Based Field-Effect Transistor (FeFET) and its Applications 27 Dhrubojyoti Roy, Mohua Chakraborty, Dipankar Bandyopadhyay and Partho Sarathi Gooh Pattader 2.1 Introduction 28 2.2 Fabrication of Gate Dielectric Layer and FeFET 30 2.3 Working of FeFET 32 2.4 Applications of FeFET Device 33 2.5 Summary 46 3 Ferroelectric Applications in Novel Devices 57 Keshav Kumar and Umesh Chandra Bind 3.1 Introduction 58 3.2 General Concepts of Ferroelectrics 59 3.3 Ferroelectric Materials Processing for Device Applications 60 3.4 Advanced Application of Ferroelectric Materials 63 3.5 Summary and Outlook 67 4 Optimization of Hetero Buried Oxide Ferro TFET and Its Analysis 77 Sirisha Meriga and Brinda Bhowmick 4.1 Introduction 78 4.2 Mechanism of the Device and Method of Simulation 79 4.3 Results and Discussions 81 4.4 Conclusion 92 5 Ferroelectric Material-Based Field Effect Transistor and Its Applications 103 Avinash Kumar and Balwinder Raj 5.1 Introduction 104 5.2 Ferroelectric Material Properties and Advantages 106 5.3 Ferroelectricity in Nanoelectronics 109 5.4 Structures of Ferroelectric FET 111 5.5 Applications 116 5.6 Conclusion 119 5.7 Future Prospects for Nanoferroelectric Devices 120 6 Ferroelectric Tunnel FET: Next Generation of Classical Low Power CMOS Technology 131 Naima Guenifi, Shiromani Balmukund Rahi, Houda Chabane and Khadidja Dibi 6.1 Introduction 132 6.2 Implementation of Ferroelectric Material in Tunnel FET 133 6.3 Results and Analysis 135 6.4 Conclusion 142 7 Identification of Negative Capacitance in Ferroelectric in FET Devices 155 Umesh Chandra Bind, Shiromani Balmukund Rahi and Keshav Kumar 7.1 Introduction 156 7.2 Negative Capacitance 157 7.3 NC in Ferroelectrics 161 7.4 Ferroelectric Materials in Practice for NC 164 7.5 Evidence of NC in Ferroelectrics 168 7.6 Perspectives 172 7.7 Conclusion 173 8 Tunnel Field Effect Transistors and Their Application in Biosensors 185 K. Manikanta, Umakanta Nanda, Pratikhya Raut and Biswajit Jena 8.1 Introduction 186 8.2 What is Biosensor: Types and its Principle 187 8.3 Components of Biosensors 188 8.4 Application of FET in Biosensors 189 8.5 How TFET Works as a Biosensor and its Structure 190 8.6 Recent Structures of TFET-Based Bio-Sensors 191 8.7 Conclusion 193 9 Transparent Conducting Oxides: Introduction, Types, Deposition Techniques and Applications 205 Isha Arora and Rishi Kant 9.1 Introduction 206 9.2 Physical Characteristics of TCOs 207 9.3 Types of Transparent Conductors 212 9.4 Deposition Techniques 217 9.5 Sol-Gel Deposition 220 9.6 Applications of TCOs 223 9.7 Conclusion 227 10 Ferroelectric and FeFET Devices as Biosensors: Principle, Mechanisms and Applications in Health, Environmental, and Agricultural Monitoring 239 Umesh Chandra Bind, Keshav Kumar, Vimala Bind, Ajay Kumar and Jyoti Nishad 10.1 Introduction 240 10.2 Biosensors 241 10.3 Characteristics of Biosensors 244 10.4 Interaction Mechanism of Ferroelectric with Physical Stimuli 245 10.5 Working Principle of Biosensors 249 10.6 Biosensing Mechanism of Ferroelectrics 249 10.7 Ferroelectrics for Biosensing 252 10.8 Ferroelectrics in Health Monitoring 253 10.9 Ferroelectrics for Environmental Monitoring 257 10.10 Ferroelectrics for Agricultural Monitoring 258 10.11 FeFET Biosensors for Monitoring 258 10.12 Perspective 263 10.13 Conclusions 264 11 Ferroelectric Application in Recent Nanoscale Device with ITRS Roadmap 275 Shiromani Balmukund Rahi and Young Suh Song 11.1 Introduction to Ferroelectric Application 276 11.2 Ferroelectric Materials and Properties 276 11.3 Basic Scaling and ITRS Roadmap 279 11.4 Nanoscale Devices: Ultra-Thin-Body MOSFET, Gate-All-Around MOSFET, Gate, Channel, Source/Drain Engineering, Local High Doping for Better Subthreshold Swing 280 11.5 Nanoscale Devices with Ferroelectric Applications 281 11.6 Advantages and Potential Applications of Ferroelectric Materials 282 11.7 Positioning of Ferroelectric Technologies in the ITRS Roadmap 284 11.8 Possible Challenge in Future Ferroelectric Applications 285 11.9 Conclusion 286 12 Recent Electron Mobility Models for FeFET 297 Shiromani Balmukund Rahi and Young Suh Song 12.1 Introduction to Electron Mobility and FeFET 297 12.2 Classical Electron Mobility Models 298 12.3 Quantum Mechanical Models for Electron Mobility 300 12.4 Density Functional Theory (DFT) Approaches for Electron Mobility 302 12.5 Empirical Electron Mobility Models and Parameter Extraction Techniques 303 12.6 Challenges and Limitations in Modeling FeFET Electron Mobility 304 12.7 Future Directions and Emerging Trends in FeFET Electron Mobility Modeling 306 12.8 Conclusion 308 References 308 About the Editors 319 Index 321
Balwinder Raj, PhD, is an associate professor at the National Institute of Technology, Jalandhar, India. He has authored and co-authored five books, 12 book chapters, and over 100 research papers in peer-reviewed national and international journals and conferences. His areas of interest include nanoscale semiconductor device modeling, nanoelectronics and their applications in hardware security, sensors, and circuit design, FinFET-based memory design, low-power very large-scale integrated design, and field programmable gate array implementation. Shiromani Balmukund Rahi, PhD, is an assistant professor in the School of Information and Communication Technology, Gautam Buddha University, Greater Noida, India. He has published 25 research articles, two conference proceedings, 25 book chapters for various projects, and seven books for reputed internal publishers. He also serves as a reviewer for various national and international journals, conferences, and workshops. His research interests include semiconductor device modeling and simulation, tunnel FETs, NCFETs, and Nanosheet FETs. Nandakishor Yadav, PhD, is a senior scientist with the Fraunhofer Institute for Photonic Microsystems, Dresden, Germany with over ten years of research and teaching experience. He has published over 50 research articles in peer-reviewed journals and conferences. His research interests include very large-scale interface design, Ferroelectric memory, and peripheral circuit design.
