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Disordered Semiconductors Second Edition

Physics and Applications

Anatoly Popov (Moscow Power Engineering Institute, Russia)



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Pan Stanford Publishing Pte Ltd
16 July 2018
Devices based on disordered semiconductors have wide applications. It is difficult to imagine modern life without printers and copiers, LCD monitors and TVs, optical disks, economical solar cells, and many other devices based on disordered semiconductors. However, nowadays books that discuss disordered (amorphous, nanocrystalline, microcrystalline) semiconductors focus, as a rule, on either physics of materials or physics of devices that are based on these materials. This book connects characteristic features of the atomic and electronic structures of disordered semiconductors and the device design process on the basis of these materials.

Compared with the first edition, this book takes into account the latest developments of disordered semiconductors and devices. It has new sections on the structures of carbon-based amorphous and nanocomposite films and atomic and electronic structures of organic semiconductors.
Edited by:   Anatoly Popov (Moscow Power Engineering Institute Russia)
Imprint:   Pan Stanford Publishing Pte Ltd
Country of Publication:   Singapore
Edition:   2nd New edition
Dimensions:   Height: 229mm,  Width: 152mm, 
Weight:   680g
ISBN:   9789814774376
ISBN 10:   9814774375
Pages:   328
Publication Date:   16 July 2018
Audience:   College/higher education ,  Primary
Format:   Hardback
Publisher's Status:   Active

Anatoly Popov is a professor at the Moscow Power Engineering Institute (MPEI), National Research University, Russia, since 1985 and has held positions of the dean of the electro-technical faculty, the first vice-rector, and the head of the Department of Semiconductor Electronics of the institute. He is also principal research scientist in the Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences and deputy chairman of the Council on Electronics and Telecommunications of the Higher Attestation Commission of Russia. He has also been an academic visitor to Fudan University, Shanghai, China, and an invited lecturer to the Samsung Advanced Institute of Technology, South Korea. He is author or co-author of more than 250 papers published in scientific journals or presented in international conferences and of 6 books on non-crystalline semiconductors. He holds patents of more than 20 inventions. His scientific interests lie in the exploration of the relationship between atomic structure and physical properties of disordered semiconductor materials and in the development of optical storage and electrical memory devices based on these materials.

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