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Design Rules in a Semiconductor Foundry

Eitan N. Shauly (Tower Semiconductor Ltd, Israel)

$809

Hardback

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English
Jenny Stanford Publishing
30 November 2022
Is designed to serve as a comprehensive and up-to-date manual for process, device, layout, and design engineers Covers topics that designers as well as layout and process engineers deal with every day, such as front-end-of-line (FEOL) and back-end-of-line BEOL DRs, coverage DRs, stressors DRs, and modeling, foundry reliability, and advance (20 nm) step-by-step process flow Can be used by those studying semiconductors and microelectronics as well as students and researchers in the fields of electrical engineering, physics, materials engineering, and chemical engineering

Edited by:  
Imprint:   Jenny Stanford Publishing
Country of Publication:   Singapore
Dimensions:   Height: 229mm,  Width: 152mm, 
ISBN:   9789814968003
ISBN 10:   9814968005
Pages:   808
Publication Date:  
Audience:   General/trade ,  ELT Advanced
Format:   Hardback
Publisher's Status:   Active
1. Layout Design Rules: Definition, Setting and Scaling 2. Front-End-Of-Line Topological Design Rules 3. Back-End-Of-Line Topological Design Rules 4. Coverage Rules and Insertion Utilities 5. Design Rules, Guidelines and Modelling for Analog Modules 6. Stress Related Layout Design Rules and Modelling 7. Dedicated Design Rules for Memory Modules 8. Planar CMOS Process Flow for Digital, Mixed-Signal and RFCMOS Applications 9. Reliability Driven Design Rules

Eitan N. Shauly is the director of integration at Tower Semiconductor Ltd., Israel, since 1998. He has been with the organization since 1989, initially as a diffusion and ion implantation engineer and a device/integration engineer and later focusing on process integration, modeling, and design rules as well as incorporating new technology in the company's foundries. Dr Shauly also teaches courses related to VLSI technology in the Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa, Israel. He received his BSc (1989) in materials engineering from Ben-Gurion University, Beer-Sheva, Israel, and MSc (1995) and PhD (2001) in materials engineering from the Technion - Israel Institute of Technology.

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