Defects in Self-Catalysed III-V Nanowires

James A. Gott

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English

Springer Nature Switzerland AG
29 January 2022

Microscopy; Testing of materials; Electronic devices & materials; Semi-conductors & super-conductors

Series: Springer Theses

This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. To probe how these defects are formed, conditions during nanowire growth can be emulated inside the microscope using the latest generation of in-situ heating holder. This allowed the examination of defect formation, dynamics, and removal, revealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.

By: James A. Gott
Imprint: Springer Nature Switzerland AG
Country of Publication: Switzerland
Edition: 2022 ed.
Dimensions: Height: 235mm, Width: 155mm,
Weight: 412g
ISBN: 9783030940614
ISBN 10: 3030940616
Series: Springer Theses
Pages: 143
Publication Date: 29 January 2022
Audience: Professional and scholarly , Undergraduate
Format: Hardback
Publisher's Status: Active

Dr James Gott obtained his BSc MPhys from the University of Warwick in 2016. He then joined the electron microscopy group at Warwick where he obtained his PhD in Physics in 2020. His research interests include utilising advanced electron microscopy techniques to study nano materials.