Carrier Transport in Nanoscale MOS Transistors

Hideaki Tsuchiya, Yoshinari Kamakura

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English

Wiley-IEEE Press
24 August 2016

Nanotechnology; Mechanical engineering & materials; Transistors

Series: IEEE Press

A comprehensive advanced level examination of the transport theory of nanoscale devices

Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds

By: Hideaki Tsuchiya, Yoshinari Kamakura
Imprint: Wiley-IEEE Press
Country of Publication: United States
Dimensions: Height: 244mm, Width: 173mm, Spine: 20mm
Weight: 590g
ISBN: 9781118871669
ISBN 10: 1118871669
Series: IEEE Press
Pages: 450
Publication Date: 24 August 2016
Audience: Professional and scholarly , Undergraduate
Format: Hardback
Publisher's Status: Active

Hideaki Tsuchiya, Associate Professor, Kobe University, Japan. Professor Tsuchiya received his Ph. D in electronic engineering from Kobe University, Kobe, Japan, in 1993. He has lectured for over ten years to graduate students on the Advanced Theory of Integrated Nanoscale Devices. His research interests focus on quantum transport simulation and atomistic modeling of nanoscale devices. He has co-written over 100 journals articles and Proceedings. Yoshinari Kamakura, Associate Professor, Department of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Japan. Professor Kamakura obtained his PhD from Osaka University in 1994 and has worked in various roles at the same institution. His research interests include semiconductor device engineering and he has co-authored a number of journals articles on the subject. He is a member of the IEEE.