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3D Integration of Resistive Switching Memory by Qing Luo at Abbey's Bookshop,
3D Integration of Resistive Switching Memory
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Qing Luo

3D Integration of Resistive Switching Memory

Qing Luo

$105

Hardback

Not in-store but you can order this
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English
CRC Press
13 April 2023
Electronics engineering; Storage media & peripherals
Series: Frontiers in Semiconductor Technology
This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications.

Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts:

1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-Selective Cells;

3: Integration of 3D RRAM;

4: Reliability Issues in 3D RRAM;

5: Applications of 3D RRAM beyond Storage.

The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.
Edited by:  
Imprint:   CRC Press
Country of Publication:   United Kingdom
Dimensions:   Height: 216mm,  Width: 138mm, 
Weight:   240g
ISBN:   9781032489438
ISBN 10:   103248943X
Series:   Frontiers in Semiconductor Technology
Pages:   98
Publication Date:  
Audience:   Professional and scholarly ,  College/higher education ,  Professional and scholarly ,  Undergraduate ,  Primary
Format:   Hardback
Publisher's Status:   Active
1. Introduction Qing Luo 2.Associative Problems in Crossbar array and 3D architectures Qing Luo 3. Selector Devices and Self-selective cells Yaxin Ding, Qing Luo 4. Integration of 3D RRAM Qing Luo 5. Reliability issues of the 3D Vertical RRAM Tiancheng Gong, Dengyun Lei 6. Applications of 3D RRAM Beyond Storage Xumeng Zhang, Xiaoxin Xu, Jianguo Yang 7. Conclusion Qing Luo

Qing Luo received his Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing, China, in 2017. He is currently Professor at the Key Laboratory of Microelectronics Devices and Integrated Technology in IMECAS. His research interests are emerging memory devices including resistive RAM devices and ferroelectric memory devices.

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