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2D Materials for Nanoelectronics

Michel Houssa Athanasios Dimoulas Alessandro Molle

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CRC Press
31 March 2021
Major developments in the semiconductor industry are on the horizon through the use of two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, for integrated circuits (ICs). 2D Materials for Nanoelectronics is the first comprehensive treatment of these materials and their applications in nanoelectronic devices.

Comprised of chapters authored by internationally recognised researchers, this book:

Discusses the use of graphene for high-frequency analog circuits Explores logic and photonic applications of molybdenum disulfide (MoS2) Addresses novel 2D materials including silicene, germanene, stanene, and phosphorene Considers the use of 2D materials for both field-effect transistors (FETs) and logic circuits Provides background on the simulation of structural, electronic, and transport properties from first principles 2D Materials for Nanoelectronics presents extensive, state-of-the-art coverage of the fundamental and applied aspects of this exciting field.
Edited by:   Michel Houssa, Athanasios Dimoulas, Alessandro Molle
Imprint:   CRC Press
Country of Publication:   United Kingdom
Dimensions:   Height: 234mm,  Width: 156mm, 
Weight:   894g
ISBN:   9780367783037
ISBN 10:   0367783037
Pages:   467
Publication Date:   31 March 2021
Audience:   College/higher education ,  Primary
Format:   Paperback
Publisher's Status:   Active
Theory of the Structural, Electronic, and Transport Properties of Graphene. Epitaxial Graphene: Progress on Synthesis and Device Integration. Metal Contacts to Graphene. Graphene for RF Analogue Applications. High-Field and Thermal Transport in Graphene. Theoretical Study of Transition Metal Dichalcogenides. Physico-Chemical Characterisation of MoS2/Metal and MoS2/Oxide Interfaces. Transition Metal Dichalcogenide Schottky Barrier Transistors: A Device Analysis and Material Comparison. TMD-Based Photodetectors, Light Emitters, and Photovoltaics. Optoelectronics, Mechanical Properties, and Strain Engineering in MoS2. Device Physics and Device Mechanics for Flexible TMD and Phosphorene Thin-Film Transistors. Structural, Electronic, and Transport Properties of Silicene and Germanene. Group IV Semiconductor 2D Materials: The Case of Silicene and Germanene. Stanene: A Likely 2D Topological Insulator. Phosphorene: A Novel 2D Material for Future Nanoelectronics and Optoelectronics. 2D Crystal-Based Heterostructures for Nanoelectronics.

Michel Houssa earned his master's and PhD in physics at the University of Liege, Belgium. He is presently a professor in the Department of Physics and Astronomy at the University of Leuven, Belgium. His current research focuses on the first principles modeling of various materials, including semiconductor/oxide interfaces and two-dimensional materials (silicene, germanene, and transition metal dichalcogenides), and their heterostructures. He has authored or co-authored nearly 350 publications, given about 50 invited talks and seminars, and been co-organiser of several international symposia and conferences. He is an Electrochemical Society fellow and an Institute of Electrical and Electronics Engineers senior member. Athanasios Dimoulas earned his PhD in applied physics at the University of Crete, Greece. He is currently the research director and head of the Epitaxy and Surface Science Laboratory at the National Center for Scientific Research Demokritos, Athens, Greece. He has coordinated several European-funded projects in advanced CMOS and received the European Research Council-funded SMARTGATE - Smart Gates for the 'Green' Transistor Advanced Investigator Grant 2011 - IDEAS. Widely published, Dr. Dimoulas has about 40 invited talks and has been active with several symposia, conferences, and committees as an organizer and chair. He has held fellowships at the University of Groningen, Holland; California Institute of Technology, Pasadena, USA; and University of Maryland, College Park, USA; and been a visiting research scientist at IBM Zurich Research Laboratory, Switzerland. Alessandro Molle earned his PhD in materials science at the University of Genoa, Italy. He is presently a research scientist and group leader of the research line on low-dimensional materials and devices in the MDM Laboratory at the Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Agrate Brianza, Italy. He is currently involved in the integration of silicene and other 2D elementary materials into transistors, and in the synthesis and structural characterisation of 2D materials beyond graphene. Widely published, he has been active with symposia, received many invitations to present at international conferences, and guest edited special issues of proceeding papers. He has been co-chairing a master's course on surfaces and interfaces at the University of Milano-Bicocca, Italy.

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